FDMC6679AZ

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FDMC6679AZ datasheet

• Маркировка
  FDMC6679AZ
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDMC6679AZ Current - Continuous Drain (id) @ 25?° C: 11.5A Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 91nC @ 10V Input Capacitance (ciss) @ Vds: 3970pF @ 15V Mounting Type: Surface Mount Package / Case: 6-MLP, Power33 Power - Max: 2.3W Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Series: PowerTrench?® Vgs(th) (max) @ Id: 3V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 25 V Continuous Drain Current: - 20 A Resistance Drain-Source RDS (on): 10 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Forward Transconductance gFS (Max / Min): 46 S Gate Charge Qg: 37 nC Minimum Operating Temperature: - 55 C Power Dissipation: 41 W Factory Pack Quantity: 3000
• Количество страниц
  7 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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Файл формата Pdf 239,63 KB